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Ballast Design for 54W T5 Fluorescent Lamp (Voltage Mode Preheating) with Controller IC ICBFL03G & 600V CoolMOS Rev.., Power Management & Multimarket Edition Published by Infineon Technologies
filexlib. CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ P6 series combines the • Pb-free plating, Halogen free mold compound • Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
CoolMOS™ is a revolutionary technology for high voltage Power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Easy to use/drive
9R340C Product details. Features. • Lowest figure-of-merit RON x Qg. • Extreme dv/dt rated. • High peak current capability. • Qualified according to JEDEC1) for industrial applications. • Pb-free lead plating; RoHS compliant. • Ultra low gate charge. The revolutionary CoolMOS™ power MOSFET family sets new standards in the field of energy efficiency. 3 Price/performance series 4 Best-in-class efficiency series 6 Fast body diode series 7 EiceDRIVER™ application guide 8 CoolMOS™ for high and low power 9 CoolMOS™ portfolio 10 Industrial and general purpose gate driver ICs 19 Content 4
CoolMOS™ is a revolutionary technology for high voltage Power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Best in class RDS (on)/package
The CoolMOS ™ 7th generation platform is a revolutionary technology for high voltage Power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS ™ P7 series is the successor to the CoolMOS P6 series. Features • Suitable for hard and soft switching (PFC and LLC) due to an outstanding
A) close automotive variant available, see your local sales contact for details 1) Samples available by Q2/2013 2) Samples available by Q3/2013 3) Samples available by Q4/2013 * Not halogen free CoolMOS™ CFD2 650V 1400 IPD65R1K4CFD 950 IPD65R950CFD 660/725 IPL65R725CFD IPD65R660CFD IPI65R660CFD IPB65R660CFD IPP65R660CFD IPA65R660CFD IPW65R660CFD 420/460 IPL65R460CFD IPD65R420CFD IPI65R420CFD
CoolMOS for high and low power 9. CoolMOS portfolio 10. Industrial and general purpose gate driver ICs 19. Content. 4. Price/performanceOptimum performance in the following more cost sensitive applications and topologies. 500 V 600 V. 0.190 3 . CoolMOS. LEDQuasi-resonant flyback. PC powerPFC/TTF 80+; PFC/LLC 90+ LCD TVLLC half-bridge. Server
A benchmark in efficiency and thermal performance. With the 800 V CoolMOS™ P7 series, Infineon sets a benchmark in 800 V superjunction technologies and combines best-in-class performance with state-of-the-art ease-of-use. This new product family is a perfect fit for flyback based consumer SMPS applications. In addition, it is also suitable
CoolMOS™ is a revolutionary technology for high voltage Power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Increased efficiency due to best in class FOM RDS (on) *Eoss and RDS (on)*Qg • Best in class RDS (on)/package • Easy to use/drive
View #14_CoolMOS™ C7 Mastering the Art of Quickness. A Technology Description and Design Guide.pdf from ECE 551 at Illinois Institute Of Technology. Application Note AN 2013-04 V1.0 April
View #14_CoolMOS™ C7 Mastering the Art of Quickness. A Technology Description and Design Guide.pdf from ECE 551 at Illinois Institute Of Technology. Application Note AN 2013-04 V1.0 April
600 V CoolMOS™ P7. The electrical characteristic of 600 V CoolMOSTM P7 provides all the benefits of a fast switching SJ MOSFET combined with low conduction losses while keeping the oscillation tendency low, giving ease-of-use. To avoid failures during assembly 600 V CoolMOS™ P7 offers an ESD robustness greater than 2 kV (HBM) for all products.
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